Transmission electron microscopy and Rutherford backscattering studies of single and double discrete buried damage layers in P+implanted Si on subsequent laser annealing-Reference-Cited by-同舟云学术

Transmission electron microscopy and Rutherford backscattering studies of single and double discrete buried damage layers in P+implanted Si on subsequent laser annealing

Published:1981-02 Issue:2 Volume:52 Page:744-747
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sadana D. K.,Strathman M.,Washburn J.,Booker G. R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.328756

Reference10 articles.

1. Electron Microscope Studies Of Ion Implanted Silicon And Gallium Arsenide After Laser And Furnace Annealing

2. Regrowth Behavior of Three Different Damage Structures in P+ Implanted and Subsequently Laser Annealed Si

3. Spatially controlled crystal regrowth of ion‐implanted silicon by laser irradiation

4. Redistribution of dopants in ion‐implanted silicon by pulsed‐laser annealing

5. Segregation Effects in Cu-Implanted Si after Laser-Pulse Melting

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