Characterization of dry etch‐induced damage in semiconductor materials using a noncontact photothermal radiometric probe
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104623
Reference5 articles.
1. Dry etching induced damage on vertical sidewalls of GaAs channels
2. Nonradiative damage measured by cathodoluminescence in etched multiple quantum well GaAs/AlGaAs quantum dots
3. Thermal wave characterization of silicon which had been high energy ion implanted and furnace annealed
4. Modelling of the photothermal radiometric response of a layered dielectric-on-semiconductor structure
5. Dry etch induced damage in GaAs investigated using Raman scattering spectroscopy
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Defect characterization of n-type Si1−xGex after 1.0 kev helium-ion etching;Journal of Electronic Materials;1997-05
2. Optical And Electrical Characterisation Study Of SICL4 Reactive Ion Etched Gaas;MRS Proceedings;1996
3. Optical and Electrical Characterisation of He Plasma Sputtered n-GaAs;Materials Science Forum;1995-11
4. Optical and Electrical Characterisation of Plasma Processed N-GaAs;MRS Proceedings;1995
5. In situ process evaluation during hydrogen plasma etching of a‐Si:H films by microwave detected transient photoconductivity measurements;Journal of Applied Physics;1993-06
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