Individual contribution of electrons and holes to photocarrier-induced bandgap renormalization in intrinsic bulk GaAs-Reference-Cited by-同舟云学术

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Individual contribution of electrons and holes to photocarrier-induced bandgap renormalization in intrinsic bulk GaAs

Published:2020-09-21 Issue:11 Volume:128 Page:115704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chen Yicun¹^ORCID,Lu Haiming¹,Lai Tianshu¹^ORCID

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China

Funder

Guangdong Basic and Applied Basic Research Foundation, China

National Basic Research Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0015495

Reference25 articles.

1. Ab initiocalculation of band-gap renormalization in highly excited GaAs

2. Dimensionality dependence of the band-gap renormalization in two- and three-dimensional electron-hole plasmas in GaAs

3. Coulomb Correlation and Band Gap Renormalization at High Carrier Densities in Quantum Wires

4. Band-gap renormalization in InP/GaxIn1−xP quantum dots

5. Temperature and magnetization-dependent band-gap renormalization and optical many-body effects in diluted magnetic semiconductors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Giant Band-Gap Renormalization and Morphology-Tunable Defect-Assisted Carrier Recombination in CsPbBr₃ Microstructures;ACS Photonics;2023-10-16

2. Giant spin-selective bandgap renormalization in CsPbBr3 colloidal nanocrystals;Physical Review B;2022-07-05

3. Effects of many-body interactions on the transient optical properties of lead halide perovskites;Journal of Applied Physics;2021-10-14

4. Publisher’s Note: “Individual contribution of electrons and holes to photocarrier-induced bandgap renormalization in intrinsic bulk GaAs” [J. Appl. Phys. 128, 115704 (2020)];Journal of Applied Physics;2020-10-07

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