Maximization of the open circuit voltage for hydrogenated amorphous silicon n–i–p solar cells by incorporation of protocrystalline silicon p-type layers-Reference-Cited by-同舟云学术

Maximization of the open circuit voltage for hydrogenated amorphous silicon n–i–p solar cells by incorporation of protocrystalline silicon p-type layers

Published:2002-08-12 Issue:7 Volume:81 Page:1258-1260
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Koval R. J.,Chen Chi,Ferreira G. M.,Ferlauto A. S.,Pearce J. M.,Rovira P. I.,Wronski C. R.,Collins R. W.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1499735

Reference11 articles.

1. Enhancement of open circuit voltage in high efficiency amorphous silicon alloy solar cells

2. Study of top contact/p-layer junction for the optimization of large-area amorphous silicon multijunction cells

3. VHF Plasma Deposition of μc-Si p-Layer Materials

4. Temperature dependence of the crystallite size and crystalline fraction of microcrystalline silicon deposited from silane by plasma CVD

5. An ellipsometry study of a hydrogenated amorphous silicon basedn‐istructure

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