Nanometer‐scale columns in GaAs fabricated by angled chlorine ion‐beam‐assisted etching
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98557
Reference7 articles.
1. Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes
2. Fabrication of small laterally patterned multiple quantum wells
3. Masked ion beam resist exposure using grid support stencil masks
4. A novel anisotropic dry etching technique
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1. Angled etching of (001) rutile Nb–TiO2substrate using SF6-based capacitively coupled plasma reactive ion etching;Japanese Journal of Applied Physics;2014-05-19
2. Fabrication of Nanomechanical Structures from Bulk-GaAs Using Angled Ion Etching;Applied Physics Express;2009-05-29
3. ECR plasma etching of GaAs in CCl2F2/Ar/O2 discharge and IR studies of the etched surface;Current Applied Physics;2005-05
4. Hillock formation observed in MOMBE of InGaAs grown on a patterned GaAs substrate;Journal of Crystal Growth;1992-05
5. Focusing of the ion beam from a scanning tunneling microscope tip;Journal of Applied Physics;1992-01-15
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