Epitaxial growth of YBa2Cu3O7−δfilms on oxidized silicon with yttria‐ and zirconia‐based buffer layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354500
Reference7 articles.
1. Thin films of Y‐Ba‐Cu‐O on silicon and silicon dioxide
2. YBaCuO thin films on Si substrate
3. High critical currents in strained epitaxial YBa2Cu3O7−δon Si
4. Crystalline Qualities and Critical Current Densities of As-Grown Ba2YCu3OxThin Films on Silicon with Buffer Layers
5. Orientation relationships of epitaxial oxide buffer layers on silicon (100) for high‐temperature superconducting YBa2Cu3O7−xfilms
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1. Fabrication of YBa2Cu3O7 Superconducting Nanocomposite Film on Silicon Substrate;ACS Applied Electronic Materials;2024-06-03
2. Functionalization of SiC-based materials by a selective YBa2Cu3O7-δ coating via sol–gel route in order to optimize their optical properties;Thin Solid Films;2015-12
3. A comparative study of YBa 2 Cu 3 O 7−δ /YSZ bilayer films deposited on silicon-on-insulator substrates with and without HF pretreatment;Chinese Physics B;2009-03-17
4. Single domain epitaxial growth of yttria-stabilized zirconia on Si(111) substrate;Ceramics International;2008-05
5. Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111);Japanese Journal of Applied Physics;2006-12-15
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