Electron trap memory characteristics of LiNbO3 film/AlGaN/GaN heterostructure

Author:

Hao L. Z.,Zhu J.,Luo W. B.,Zeng H. Z.,Li Y. R.,Zhang Y.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Synthesis and properties of multifunctional Si–LiNbO3 heterostructures for non-volatile memory units;Journal of Materials Science: Materials in Electronics;2019-08-17

2. Ferroelectric Polarization Rotation in Order–Disorder-Type LiNbO3 Thin Films;ACS Applied Materials & Interfaces;2018-11-08

3. Investigation of Non Volatile AlGaN/GaN Flash Memory for High Temperature Operation;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2018-02-28

4. Effect of sputtering conditions and thermal annealing on electron phenomena in the Si-LiNbO3 heterostructures;Lithium Niobate-Based Heterostructures Synthesis, properties and electron phenomena;2018

5. Thin films of lithium niobate: potential applications, synthesis methods, structure and properties;Lithium Niobate-Based Heterostructures Synthesis, properties and electron phenomena;2018

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