Structure evolution and energy band modulation in Ba-doped BiFeO3 thin films

Abstract

Bi1−xBaxFeO3 (BBFO, x = 0, 0.03, 0.1) thin films were epitaxially grown on SrRuO3-buffered SrTiO3 (001) substrates by pulsed laser deposition. With increasing Ba content, the BBFO thin films show significantly reduced leakage currents but suppressed ferroelectric polarization. X-ray diffraction reciprocal space mappings and Raman spectra indicate a structural evolution from a rhombohedral-like to tetragonal-like phase in the BBFO thin films. Optical absorption and photoelectron spectroscopy measurements demonstrate a modulation of energy band structures in the BBFO thin films. With A-site Ba acceptor doping, the BBFO thin films exhibit a blue-shift of optical bandgap and an increase in work function. The energy positions of conduction and valence bands of the BBFO thin films have been modulated, and the Fermi level shifts down to the center of the forbidden band, but acceptor-doped BFO thin films still show n-type conduction. The presence of extra oxygen vacancies by acceptor doping is supposed to make contribution to conduction behavior. This study provides a method to manipulate the functional properties and gives insights into the physics of Ba doping in BFO thin films.