Low-cost fabrication and polar-dependent switching uniformity of memory devices using alumina interfacial layer and Ag nanoparticle monolayer
Author:
Affiliation:
1. Department of Materials Science, Fudan University, Shanghai 200433, China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5000420
Reference29 articles.
1. Organic Memory Device Fabricated Through Solution Processing
2. Enhanced resistive switching effect in Ag nanoparticle embedded BaTiO3 thin films
3. Electrical bistabilities and carrier transport mechanisms of write-once-read-many-times memory devices fabricated utilizing ZnO nanoparticles embedded in a polystyrene layer
4. Nonvolatile Memristive Switching Characteristics of TiO$_{\bm 2}$ Films Embedded With Nickel Nanocrystals
5. Organic Materials and Thin-Film Structures for Cross-Point Memory Cells Based on Trapping in Metallic Nanoparticles
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