Anomalies in the pressure response of the Raman modes in (211)‐oriented InxGa1−xAs/GaAs strained‐layer superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107556
Reference13 articles.
1. Strained-layer superlattices: A brief review
2. Growth of GaAs, AlGaAs, and InGaAs on (111)B GaAs by molecular-beam epitaxy
3. Molecular‐beam‐epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation
4. Excitonic optical nonlinearity induced by internal field screening in (211) oriented strained‐layer superlattices
5. Comparison and spatial profiling of strain in [001]- and [111]-orientedInxGa1−xAs/GaAs superlattices from Raman and x-ray experiments
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1. Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors;Semiconductor Science and Technology;1996-05-01
2. Excitonic transitions of Cd0.936Zn0.064 Te/CdTe strained single quantum wells grown by double-well temperature-gradient vapor-transport deposition;Physica Status Solidi (a);1995-04-16
3. Zone-center optical phonons inInxGa1−xAs alloys;Physical Review B;1994-12-15
4. Effects of hydrostatic pressure on the optic and transverse-acoustic vibrations of a (012) GaAs/AlAs superlattice;Physical Review B;1993-10-15
5. Intersubband transition studies of Cd0.936Zn0.064Te/CdTe superlattices grown by double-well temperature-gradient vapor transport deposition;Solid State Communications;1993-10
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