Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125911
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1. 30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes
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3. Efficient 4.2 [micro sign]m light emitting diodes for detecting CO2 at room temperature
4. InAsSb light emitting diodes and their applications to infra-red gas sensors
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