Author:
Tamura M.,Yoshihiro N.,Ikeda T.
Subject
Physics and Astronomy (miscellaneous)
Reference11 articles.
1. S. M. Davidson, inProceedings of the European Conference on Ion Implantation, Reading, England (Peter Peregrinus, Stevenage, England, 1970), p. 238.
2. Secondary defects in phosphorus‐implanted silicon
3. Role of sequential annealing, oxidation, and diffusion upon defect generation in ion‐implanted silicon surfaces
4. S. Prussin, in Proceedings of the 4th International Conference on Ion Implanted Semiconductors and Other Materials, Osaka, Japan, 1974 (unpublished).
5. N. Yoshihiro, M. Tamura, and T. Tokuyama, in Ref. 4.
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