Characteristics of SiC pillar-shaped nanostructure Schottky diode
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3176898
Reference18 articles.
1. Fabrication of sub-25 nm diameter pillar nanoimprint molds with smooth sidewalls using self-perfection by liquefaction and reactive ion etching
2. Dependence of field-effect mobility and contact resistance on nanostructure in regioregular poly(3-hexylthiophene) thin film transistors
3. Pt∕ZnO nanowire Schottky diodes
4. Electrical transport in boron nanowires
5. Aligned carbon nanotubes for nanoelectronics
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1. Field-emission property of self-purification SiC/SiOx coaxial nanowires synthesized via direct microwave irradiation using iron-containing catalyst;Electronic Materials Letters;2017-04-20
2. From the Au nano-clusters to the nanoparticles on 4H-SiC (0001);Scientific Reports;2015-09-10
3. Mechanical Properties of Crystalline Silicon Carbide Nanowires;Journal of Nanoscience and Nanotechnology;2015-02-01
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