Electron mobility and minority‐carrier lifetime ofn‐InP single crystals grown by liquid‐encapsulated Czochralski method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328591
Reference9 articles.
1. Growth of Dislocation-Free Undoped InP Crystals
2. Recombination in silicon p−π−n diodes
3. InP Single Crystal Growth by the Synthesis, Solute Diffusion Method
4. Electron Mobility in Direct-Gap Polar Semiconductors
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2. Improvement on the Performance of InP/CdS Solar Cells with the Inclusion of Plasmonic Layer of Silver Nanoparticles;Plasmonics;2014-06-01
3. Electronic and microstructural properties of disorder-induced gap states at compound semiconductor–insulator interfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1987-07
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