Influence of the doping element on the electron mobility in n-silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367067
Reference20 articles.
1. Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
2. Impurity core effects on electron mobility in N type silicon
3. Effect of Impurity-Core on Carrier Mobility in Heavily Doped Germanium
4. Central-cell corrections to the theory of ionized-impurity scattering of electrons in silicon
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