Room temperature infrared photoresponse of self assembled Ge/Si (001) quantum dots grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3446848
Reference21 articles.
1. Mechanisms of photocurrent generation in SiGe/Si HIP infrared photodetectors
2. Normal incidence infrared detector using intervalence‐subband transitions in Si1−xGex/Si quantum wells
3. Lateral photoconductivity and bound states of self-assembled Ge/Si quantum dots
4. Normal-incidence mid-infrared Ge quantum-dot photodetector
5. Band offsets and photocurrent spectroscopy of Si/Ge heterostructures with quantum dots
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