Photoluminescence study on local atomic arrangements in InGaP and GaAsP alloys using Co deep impurity
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340268
Reference22 articles.
1. Measurements of residual stress in semi-insulating GaAs by Cr-related luminescence lines
2. Characterization of interface stress at InGaPAs/GaAs by cr-related luminescence line in GaAs
3. Interface Stress at ZnSe/GaAs:Cr Heterostructure
4. Effects of In Doping on Cr-Related Luminescence in GaAs
5. Observation of local lattice distortion induced by In doping in GaAs
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1. Photoluminescence study of deep acceptor levels on Co and Ni diffused In0.5Ga0.5 P/GaAs heterojunction;Physica Status Solidi (a);1995-10-16
2. Luminescence from the 2T2g(H) state of cobalt(II)-doped KCdBr3;Inorganic Chemistry;1995-05
3. Short- and long-range-order effects on the electronic properties of III-V semiconductor alloys;Physical Review B;1995-04-15
4. Effects of atomic clustering on the optical properties of III‐V alloys;Applied Physics Letters;1994-05-23
5. Evidence of a deep donor in CdTe;Journal of Crystal Growth;1992-02
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