Comparison of electrical and electro-optical characteristics of light-emitting capacitors based on silicon-rich Si-oxide fabricated by plasma-enhanced chemical vapor deposition and ion implantation-Reference-Cited by-同舟云学术

Comparison of electrical and electro-optical characteristics of light-emitting capacitors based on silicon-rich Si-oxide fabricated by plasma-enhanced chemical vapor deposition and ion implantation

Published:2012-03 Issue:5 Volume:111 Page:053109
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

González-Fernández A. A.,Juvert J.,Morales-Sánchez Alfredo,Barreto Jorge,Aceves-Mijares M.,Domínguez C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3692082

Reference34 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films

3. Comparative study between silicon-rich oxide films obtained by LPCVD and PECVD

4. Analysis of surface roughness and its relationship with photoluminescence properties of silicon-rich oxide films

5. Correlation between electroluminescence and structural properties of Si nanoclusters

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