Polar-optical-phonon induced nonlinearity at semiconductor interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125004
Reference3 articles.
1. Progress toward solid-state local oscillators at 1 THz
2. A degenerately-doped GaAs Schottky diode model applicable for terahertz frequency regime operation
3. Nonparabolicity of the conduction band and the coupled plasmon-phonon modes inn-GaAs
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Nanoscale ballistic diodes made of polar materials for amplification and generation of radiation in the 10 THz-range;Journal of Applied Physics;2019-08-28
2. Emerging Solid State Terahertz Electronics;Terahertz Sources and Systems;2001
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