1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K-Reference-Cited by-同舟云学术

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1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K

Published:2017-10-30 Issue:18 Volume:111 Page:182102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xue Yongzhou¹²^ORCID,Chen Zesheng¹^ORCID,Ni Haiqiao¹,Niu Zhichuan¹,Jiang Desheng¹^ORCID,Dou Xiuming¹²,Sun Baoquan¹²

Affiliation:

1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

Funder

the National Key Research and Development of China

the National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5010049

Reference37 articles.

1. Single-photon sources

2. Single-photon generation with InAs quantum dots

3. Controlling the emission profile of a nanowire with a conical taper

4. Bright single-photon sources in bottom-up tailored nanowires

5. Highly directive and Gaussian far-field emission from “giant” photonic trumpets

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