Low dark currentp‐i‐nphotodiodes with an anomalous dynamic behavior
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105824
Reference5 articles.
1. A calculation of the capacitance-voltage characteristics of p+-InP/n-InP/n-InGaAsP photodiodes
2. Optical response time of In0.53Ga0.47As/InP avalanche photodiodes
3. Monolithically integrated InGaAs/InP MSM-FET photoreceiver prepared by chemical beam epitaxy
4. InGaAs/InP-Photodiodes with dark current limited by generation-recombination
5. A Capacitance Investigation of InGaAs/InP Isotype Heterojunction
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A DIL-type miniature optical transceiver module using an InGaAsP half-transmittance photodiode for TCM optical access networks;Journal of Lightwave Technology;1999
2. A compact coaxial-type optical transceiver module using a half-transmittance photodiode for TCM optical access networks;Journal of Lightwave Technology;1998
3. Time resolved OBIC/EBIC mapping of InGaAsP/InP photodiodes;Microelectronic Engineering;1994-03
4. Electro-optic properties of InGaAs/InP multi-quantum well PIN structures;Journal of Crystal Growth;1993-01
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