Relaxation processes following excitation and ionization of SiF4in the vicinity of the silicon 2pthreshold. I. Electronic relaxation processes
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.456235
Reference42 articles.
1. Angle resolved photoelectron study of resonances near the Si 2p edge of the Si(CH3)4 molecule
2. Selective resonant photoionization processes near the Si 2pedge of tetramethylsilane
3. Relaxation processes of resonances inSiH4in the vicinity of the silicon 2pthreshold
4. Ionization potentials and electron momentum distributions for SiF4 valence-shell orbitals: an (e,2e) spectroscopic investigation and Green's function study
5. An MS-Xα study of the photoelectron spectra and bonding in the fluorosilanes
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1. Site-dependent Si KL23L23 resonant Auger electron spectra following inner-shell excitation of Cl3SiSi(CH3)3;The Journal of Chemical Physics;2013-11-07
2. A variety of characteristic behaviour of resonant KL23L23Auger decays following Si K-shell photoexcitation of SiCl4;Journal of Physics B: Atomic, Molecular and Optical Physics;2013-03-22
3. Cascade Auger decays following Si KL23L23 Auger transitions in SiF4;The Journal of Chemical Physics;2013-01-14
4. Projection of Si 1s photoexcited orbitals into resonant Auger electron spectra in KLL decays of Si(CH3)4 and SiF4;The Journal of Chemical Physics;2011-02-28
5. Projection of excited orbitals into kinetic energies of emitted electrons in resonant SiKLLAuger decays of SiF4;Physical Review A;2010-10-06
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