High mobility of a three-dimensional hole gas in parabolic quantum wells grown on GaAs(311)A substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1888041
Reference10 articles.
1. Parabolic quantum wells with theGaAs−AlxGa1−xAssystem
2. Coexistence of a two- and three-dimensional Landau states in a wide parabolic quantum well
3. Far‐infrared emission from parabolically graded quantum wells
4. Growth and characterization of Be modulation doped wide parabolic GaAs⧸AlxGa1-xAs wells
5. Photoluminescence excitation spectroscopy of Be-remotely-doped wide parabolic GaAs/AlxGa1−xAs quantum wells
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3. Electron transport in Al Ga1−As δ-MIGFETs: Conductivity enhancement induced by magnetic field effects;Superlattices and Microstructures;2016-12
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