Carbon attachment on the aluminum nitride gate dielectric in the pentacene-based organic thin-film transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3093686
Reference26 articles.
1. Temperature-independent transport in high-mobility pentacene transistors
2. Hole mobility in organic single crystals measured by a “flip-crystal” field-effect technique
3. Effects of Ar/N2Flow Ratio on Sputtered-AlN Film and Its Application to Low-Voltage Organic Thin-Film Transistors
4. Low-voltage organic transistors with an amorphous molecular gate dielectric
5. PMMA–Ta2O5 bilayer gate dielectric for low operating voltage organic FETs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ion Beam Effect on the Structural and Optical Properties of AlN:Er;Journal of Composites Science;2022-04-07
2. Thermal Expansion Coefficient Considerations on Field-Effect Mobility of Pentacene Organic Thin-Film Transistors With an AlN Gate Dielectric;IEEE Transactions on Electron Devices;2012-01
3. Methane Exposure on the Aluminum Nitride Gate Dielectric in Pentacene-Based Organic Thin-Film Transistors;Electrochemical and Solid-State Letters;2009
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