In situ infrared-transmission study of vibrational and electronic properties during the formation of thin-film β-FeSi[sub 2]
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference28 articles.
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5. Fabrication of heterostructure p-β-Fe0.95Mn0.05Si2/n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Numerical investigation of the effect of insulator permittivity on the initial stage of dielectric barrier discharge;Journal of Physics: Conference Series;2020-11-01
2. Atomic vibrational density of states of crystallineβ−FeSi2and amorphousFeSi2thin films;Physical Review B;2005-01-11
3. Characterization Investigation of β-FeSi2Semiconductor by In Situ Ultrahigh-Vacuum Transmission Electron Microscopy;Japanese Journal of Applied Physics;2003-07-30
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