Optimum separate confinement structure for midinfrared HgCdTe heterostructure lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351632
Reference10 articles.
1. Chapter 1 The Emergence of Hg1-xCdxTe as a Modern Infrared Sensitive Material
2. Long and middle wavelength infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular‐beam epitaxy
3. Long and middle wavelength infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular‐beam epitaxy
4. HgCdTe double heterostructure injection laser grown by molecular beam epitaxy
5. HgCdTe double heterostructure diode lasers grown by molecular-beam epitaxy
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1. Intraband carrier relaxation in mid-infrared (3–4 μm) HgCdTe based structures: Effect of the carrier heating on the operating temperatures of bulk and quantum-well lasers;Journal of Applied Physics;2023-02-15
2. Laser emission in HgCdTe in the 2–3.5μm range;Journal of Crystal Growth;1999-02
3. Long Wavelength (λ > 2 μm) Semiconductor Lasers;Semiconductor Lasers II;1999
4. High-temperature HgTe/CdTe multiple-quantum-well lasers;Optics Express;1998-02-16
5. Emission devices;Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications;1997
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