Symmetry properties of n-doped (Cd,Mn)Te quantum well photoluminescence spectra: An exemplary evidence for anisotropy-induced valence-band mixing-Reference-Cited by-同舟云学术

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Symmetry properties of n-doped (Cd,Mn)Te quantum well photoluminescence spectra: An exemplary evidence for anisotropy-induced valence-band mixing

Published:2016-05-09 Issue:19 Volume:108 Page:191113
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Koudinov A. V.¹²,Kehl C.³,Astakhov G.¹³^ORCID,Geurts J.³,Wojtowicz T.⁴,Karczewski G.⁴^ORCID

Affiliation:

1. A. F. Ioffe Physico-Technical Institute of RAS, 194021 St.-Petersburg, Russia

2. Spin Optics Laboratory, St.-Petersburg State University, 198504 St.-Petersburg, Russia

3. Physikalisches Institut, Universität Würzburg, 97074 Würzburg, Germany

4. Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland

Funder

Russian Foundation for Basic Research (RFBR)

Dynasty Foundation (Dmitry Zimin Foundation Dynasty)

Saint Petersburg State University (SPbU)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4949531

Reference41 articles.

1. Fine structure of excitons in type-II GaAs/AlAs quantum wells

2. Hidden anisotropy of localized exciton states in short period GaAs/AlAs superlattices

3. Fine structure of heavy excitons in GaAs/AlAs superlattices

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