Donor‐acceptor pair radiative recombination from ion‐implanted donors and acceptors in GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.326470
Reference9 articles.
1. Photoluminescence from Be‐implanted GaAs
2. Temperature dependence of photoluminescence from Be‐implanted GaAs
3. Photoluminescence from Mg‐implanted GaAs
4. Temperature dependence of photoluminescence from Mg‐implanted GaAs
5. Excitation‐dependent emission in Mg‐, Be‐, Cd‐, and Zn‐implanted GaAs
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1. Photoluminescence of Be implanted Si-doped GaAs;Journal of Electronic Materials;1999-12
2. Photoluminescence spectra of Cl-doped CdTe crystals;Journal of Crystal Growth;1998-03
3. Ion implantation into (x11)A‐oriented InP and GaAs (x≤4);Journal of Applied Physics;1994-06-15
4. Photoluminescence studies in ZnxCd1−xTe single crystals;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1990-07
5. FORMATION OF NEW PAIR-LIKE EMISSIONS BETWEEN DEFECTS AND DONOR-IMPURITIES IN Ge-DOPED GaAs GROWN BY MBE, ANNEALED AT HIGH TEMPERATURES;Defect Control in Semiconductors;1990
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