Low temperature preparation of HfO2/SiO2stack structure for interface dipole modulation
Author:
Affiliation:
1. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5057398
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