Heterojunctions of InP with amorphous hydrogenated silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354169
Reference11 articles.
1. The current transport mechanism of p-type aSi:H/n-type cSi heterojunctions and their application to an imaging device
2. Carrier transport mechanisms ofp‐type amorphous–n‐type crystalline silicon heterojunctions
3. Electrical Properties of p-Type Hydrogenated Amorphous Silicon-n-Type Crystalline Gallium Arsenide Heterojunctions
4. Heterostructures with hydrogenated amorphous silicon for use in imaging devices
5. Switching characteristics of hydrogenated amorphous silicon/crystalline silicon heterojunction devices
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1. Evaluation of Semiinsulating Annealed InP:Ta for Radiation Detectors;IEEE Transactions on Nuclear Science;2006-12
2. Evaluation of semi-insulating InP crystals for nuclear radiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1996-04
3. Cadmium selenide-amorphous hydrogenated silicon heterostructures;Applied Surface Science;1995-07
4. Design of an optically addressed spatial light modulator sensitive to 1.55-μm write light;Spatial Light Modulators and Applications;1995
5. III-Vs in Australia;III-Vs Review;1994-08
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