Oxygen species in HfO2 films: An in situ x-ray photoelectron spectroscopy study
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2759198
Reference42 articles.
1. High dielectric constant gate oxides for metal oxide Si transistors
2. High-? Gate Dielectrics
3. High-κ gate dielectrics: Current status and materials properties considerations
4. Thermodynamic stability of binary oxides in contact with silicon
5. Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2
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