On the origin of intense luminescence at 0.93 eV from multi-crystalline silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4815880
Reference40 articles.
1. Photoluminescence analysis of intragrain defects in multicrystalline silicon wafers for solar cells
2. Residual stresses in polycrystalline silicon sheet and their relation to electron-hole lifetime
3. Spatially resolved modeling of the combined effect of dislocations and grain boundaries on minority carrier lifetime in multicrystalline silicon
4. Effect of dislocations on minority carrier diffusion length in practical silicon solar cells
5. Effects of crystal defects and their interactions with impurities on electrical properties of multicrystalline Si
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers;IEEE Journal of Photovoltaics;2017-05
2. Classification of crystal defects in multicrystalline silicon solar cells and wafer using spectrally and spatially resolved photoluminescence;Journal of Applied Physics;2016-02-07
3. Micrometer-Scale Deep-Level Spectral Photoluminescence From Dislocations in Multicrystalline Silicon;IEEE Journal of Photovoltaics;2015-05
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