Radiative cooling by light down conversion of InGaN light emitting diode bonded to a Si wafer-Reference-Cited by-同舟云学术

Radiative cooling by light down conversion of InGaN light emitting diode bonded to a Si wafer

Published:2013-06-17 Issue:24 Volume:102 Page:241102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Malyutenko V. K.,Bogatyrenko V. V.,Malyutenko O. Yu.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4811373

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4. Parameter analysis and optimization for the radiative cooling effect due to negative luminescence

5. Negative luminescence in semiconductors: a retrospective view

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