Auger generation suppression in narrow‐gap semiconductors using the magnetoconcentration effect
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350505
Reference11 articles.
1. Non-equilibrium modes of operation of narrow-gap semiconductor devices
2. Nonequilibrium devices for infra-red detection
3. Non-equilibrium modes of operation for infrared detectors
4. Room temperature IR photodetector with electromagnetic carrier depletion
5. Magnetoconcentration effect at nonlinear recombination of current carriers
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2. Cavity Enhancement of Auger-Suppressed Detectors: A Way to Background-Limited Room-Temperature Operation in 3–14-<tex>$mu$</tex>m Range;IEEE Journal of Selected Topics in Quantum Electronics;2004-07
3. Optimised high-frequency performance of Auger-suppressed magnetoconcentration photoconductors;Microelectronics Journal;2000-12
4. A novel multi-heterojunction HgCdTe long-wavelength infrared photovoltaic detector for operation under reduced cooling conditions;Semiconductor Science and Technology;1998-10-01
5. Multi-heterojunction large area HgCdTe long wavelength infrared photovoltaic detector for operation at near room temperatures;Journal of Electronic Materials;1998-06
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