Temperature‐compensated, differential tensimeter for measuring gas adsorption by low surface area solids
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1137088
Reference8 articles.
1. The Determination of Small Surface Areas by Krypton Adsorption at Low Temperatures
2. Surface areas and c values for chemically etched and thermally oxidized silicon single-crystal surfaces by Krypton absorption
3. Surface areas and c values for chemically etched and thermally oxidized silicon single-crystal surfaces by Krypton absorption
4. Surface areas and c values for chemically etched and thermally oxidized silicon single-crystal surfaces by Krypton absorption
5. The rapid measurement of small surface area by xenon adsorption
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1. Automated Xe adsorption technique to measure small Brunauer–Emmett–Teller surface area of several square centimeters;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
2. Quantitative surface area evaluation of rugged polycrystalline Si plate for dynamic random access memory capacitor by xenon adsorption;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
3. New apparatus for measuring surface areas as low as 0.1 cm(2);Catalysis Surveys from Japan;1999
4. Measurement of 0.1 cm2 surface areas by xenon adsorption at liquid oxygen temperature using an adsorption apparatus with a temperature-compensated, differential tensimeter of symmetrical design;Review of Scientific Instruments;1997-12
5. Measurement of 1 cm2 surface areas by krypton adsorption using an adsorption apparatus with a temperature‐compensated, differential tensimeter of symmetrical design;Review of Scientific Instruments;1995-10
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