Theoretical calculation of impact ionization rate in SiO2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354959
Reference31 articles.
1. Electron heating in silicon dioxide and off‐stoichiometric silicon dioxide films
2. Monte Carlo Solution to the Problem of High-Field Electron Heating in SiO2
3. Theory of high-field electron transport in silicon dioxide
4. Vacuum emission of hot electrons from silicon dioxide at low temperatures
5. Acoustic-phonon runaway and impact ionization by hot electrons in silicon dioxide
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