Impact of time and space evolution of ion tracks in nonvolatile memory cells approaching nanoscale-Reference-Cited by-同舟云学术

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Impact of time and space evolution of ion tracks in nonvolatile memory cells approaching nanoscale

Published:2010-12-15 Issue:12 Volume:108 Page:124907
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cellere G.,Paccagnella A.,Murat M.,Barak J.,Akkerman A.,Harboe-Sorensen R.,Virtanen A.,Visconti A.,Bonanomi M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3514167

Reference86 articles.

1. Single Event Phenomena

2. Latch-Up in CMOS Integrated Circuits

3. Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors

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3. Rutherford Scattering Model Implemented in Molecular Dynamics Simulations for Electron Irradiation Effects;Journal of Computational and Theoretical Nanoscience;2015-08-01

4. Single Event Hard Errors in SRAM Under Heavy Ion Irradiation;IEEE Transactions on Nuclear Science;2014-10

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