Electrical measurement of the formation of the platinum‐rich metal silicides by metal‐silicon reaction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97940
Reference12 articles.
1. Temperature dependence of semiconducting and structural properties of Cr‐Si thin films
2. Morphology and kinetics of crystallization of amorphous V75Si25thin‐alloy films
3. Cr75Si25 thin films—Temperature dependence of electrical properties and microstructure
4. The film compounds in planar PtSi reaction
5. Phase diagrams and metal‐rich silicide formation
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1. Electronic and thermal properties of stoichiometric Pt3Si films grown by co-evaporation;Journal of Materials Science;2017-11-06
2. Synthesis and thermal stability of Pt3Si, Pt2Si, and PtSi films grown by e-beam co-evaporation;Journal of Alloys and Compounds;2016-10
3. A novel self-aligned process for platinum silicide nanowires;Microelectronic Engineering;2006-11
4. Kinetic studies of intermetallic compound formation by resistance measurements;Thin Solid Films;1995-02
5. Nucleation of a new phase from the interaction of two adjacent phases: Some silicides;Journal of Materials Research;1988-02
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