Ion channeling investigation of proton-irradiation-induced In–Ga atomic intermixing in self-assembled InAs∕GaAs quantum dot structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2388139
Reference29 articles.
1. Nano-Optoelectronics
2. Electronics states of interdiffused quantum dots
3. Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots
4. Origin of the inhomogenous broadening and alloy intermixing in InAs/GaAs self-assembled quantum dots
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4. Effect of ion-implantation enhanced intermixing on luminescence of InAs/InP quantum dots;Journal of Physics D: Applied Physics;2008-10-01
5. Ion beam studies of InAs/GaAs quantum dots after annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04
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