Author:
Pan J. N.,Cooper J. A.,Melloch M. R.
Subject
General Physics and Astronomy
Cited by
14 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs;IEEE Transactions on Power Electronics;2016-02
2. Device Processing of Silicon Carbide;Fundamentals of Silicon Carbide Technology;2014-09-26
3. Field-plate design for edge termination in silicon carbide high-power Schottky diodes;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-03
4. Carrier Generation Lifetimes in 4H-SiC MOS Capacitors;IEEE Transactions on Electron Devices;2010-08
5. Silicon Dioxide–Silicon Carbide Interfaces;Defects in Microelectronic Materials and Devices;2008-11-19