Effects of compressive and tensile uniaxial stress on the operation of AlGaAs/GaAs quantum‐well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106640
Reference10 articles.
1. Effects of stress on threshold, wavelength, and polarization of the output of InGaAsP semiconductor diode lasers
2. High temperature operation of lattice matched and strained InGaAs-InP quantum well lasers
3. Low threshold 1.5 μm tensile-strained single quantum well lasers
4. Measurements of the polarization dependence of the gain of strained multiple quantum well InGaAs-InP lasers
5. Band-structure engineering for low-threshold high-efficiency semiconductor lasers
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1. Influence of the depletion region in GaAs/AlGaAs quantum well nanowire photodetector;Nanotechnology;2020-08-13
2. Basic Diode Laser Engineering Principles;Semiconductor Laser Engineering, Reliability and Diagnostics;2013-01-24
3. Passive temperature compensation of uncooled GaInAsP-InP diode lasers using thermal stress;IEEE Journal of Selected Topics in Quantum Electronics;1997-04
4. Diamond‐anvil uniaxial stress cell;Review of Scientific Instruments;1996-02
5. High efficiency and low threshold current strained V‐groove quantum‐wire lasers;Applied Physics Letters;1994-06-27
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