1.54 μm Er3+ photoluminescent properties of erbium-doped Si/SiO2 superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123620
Reference17 articles.
1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
2. Room‐temperature electroluminescence from Er‐doped crystalline Si
3. Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode
4. Excitation and nonradiative deexcitation processes ofEr3+in crystalline Si
5. Electroluminescence of erbium-doped silicon
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