Electrical and optical characteristics of two color mid wave HgCdTe infrared detectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123640
Reference4 articles.
1. Molecular beam epitaxial growth and performance of integrated two-color HgCdTe detectors operating in the mid-wave infrared band
2. Molecular beam epitaxial growth of HgCdTe midwave infrared multispectral detectors
3. Energy gap versus alloy composition and temperature in Hg1−xCdxTe
4. Tunneling and 1/f noise currents in HgCdTe photodiodes
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Backside-illuminated infrared photoluminescence and photoreflectance: Probe of vertical nonuniformity of HgCdTe on GaAs;Applied Physics Letters;2010-03-22
2. Physical structure of molecular-beam epitaxy growth defects in HgCdTe and their impact on two-color detector performance;Journal of Electronic Materials;2004-06
3. GaInAs(P) based QWIPs on GaAs, InP, and Si substrates for focal plane arrays;Handbook of Infra-red Detection Technologies;2002
4. HgCdZnTe quaternary materials for lattice-matched two-color detectors;Journal of Electronic Materials;2000-06
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