Suppression of bias voltage dependence in double-barrier magnetic tunnel junctions comprised of freelayers with an amorphous layer insertion
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1853839
Reference9 articles.
1. Optimum tunnel barrier in ferromagnetic–insulator–ferromagnetic tunneling structures
2. Quenching of Magnetoresistance by Hot Electrons in Magnetic Tunnel Junctions
3. Interface Magnetism and Spin Wave Scattering in Ferromagnet-Insulator-Ferromagnet Tunnel Junctions
4. Band Structure and Density of States Effects in Co-Based Magnetic Tunnel Junctions
5. Enhanced tunnel magnetoresistance at high bias voltage in double-barrier planar junctions
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1. Effect of Interface Roughness on Magnetoresistance and Magnetization Switching in Double-Barrier Magnetic Tunnel Junction;IEEE Transactions on Magnetics;2009-06
2. Field detection in single and double barrier MgO magnetic tunnel junction sensors;Journal of Applied Physics;2008-04
3. Bias Voltage Dependence of Magnetic Tunnel Junctions Comprising Double Barriers and CoFe/NiFeSiB/CoFe Free Layer;Journal of the Korean Magnetics Society;2007-06-30
4. Bias Voltage Dependence of Magnetic Tunnel Junctions Comprising Double Barriers and CoFe/NiFeSiB/CoFe Free Layer;IEEE Transactions on Magnetics;2006-10
5. Controlled fabrication of nano-scale double barrier magnetic tunnel junctions using focused ion beam milling method;Journal of Magnetism and Magnetic Materials;2006-08
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