Electrical bias stressing and radiation induced charge trapping in HfO2/SiO2 dielectric stacks
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2727435
Reference12 articles.
1. Modeling negative bias temperature instabilities in hole channel metal–oxide–semiconductor field effect transistors with ultrathin gate oxide layers
2. Stable trapping of electrons and holes in deposited insulating oxides: Al2O3, ZrO2, and HfO2
3. A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures
4. The radiation response of the high dielectric-constant hafnium oxide/silicon system
5. Identification of the atomic scale defects involved in radiation damage in HfO/sub 2/ based MOS devices
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1. Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications;Journal of Electronic Materials;2018-04-02
2. Impact of electrical stress on the electrical characteristics of 2MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics;Solid-State Electronics;2013-11
3. 2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon;Thin Solid Films;2013-05
4. Electron Irradiation Effects on Atomic Layer Deposited High-k Gate Dielectrics;ECS Transactions;2011-10-04
5. (Invited) Direct Observation of Electronic States in Gate Stack Structures: XPS under Device Operation;ECS Transactions;2011-10-04
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