Electron energy and angle distribution of GaAs photocathodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4816045
Reference53 articles.
1. The surface activation layer of GaAs negative electron affinity photocathode activated by Cs, Li, and NF3
2. Influence of exponential-doping structure on photoemission capability of transmission-mode GaAs photocathodes
3. Photovoltage effects in photoemission from thin GaAs layers
4. A very high charge, high polarization gradient-doped strained GaAs photocathode
5. Experimental Evidence for Optical Population of theXMinima in GaAs
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1. Early stage of Cs activation mechanism for In0.53Ga0.47As (0 0 1) β2 (2 × 4) surfaces: Insights from first-principles calculations;Applied Surface Science;2018-11
2. First principles study on the structural stability and optoelectronic properties of InxGa1−xAs materials with different Indium component;Materials Research Express;2018-01-25
3. Comparative Research on Cs Activation Mechanism for Al0.5Ga0.5As (001) and Al0.25Ga0.75N (0001) Surface;IEEE Sensors Journal;2015-09
4. High stability of negative electron affinity gallium arsenide photocathodes activated with Cs and NF3;Journal of Physics D: Applied Physics;2015-08-21
5. Insight into the photoelectron angular dependent energy distribution of negative-electron-affinity InP photocathodes;Applied Physics Letters;2014-01-13
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