Metal-induced gap states in passivating metal/silicon contacts-Reference-Cited by-同舟云学术

Metal-induced gap states in passivating metal/silicon contacts

Published:2019-02-18 Issue:7 Volume:114 Page:071601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sajjad Muhammad¹,Yang Xinbo¹,Altermatt Pietro²^ORCID,Singh Nirpendra¹,Schwingenschlögl Udo¹,De Wolf Stefaan¹^ORCID

Affiliation:

1. King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Building 5, Thuwal 23955-6900, Kingdom of Saudi Arabia

2. Changzhou Trina Solar Energy Co., Ltd., State Key Laboratory for Photovoltaic Science and Technology (SKL), No. 2 Trina Road, Trina PV Industrial Park, Xinbei District, Changzhou, Jiangsu Province 213031, China

Funder

King Abdullah University of Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5066423

Reference31 articles.

1. High-efficiency crystalline silicon solar cells: status and perspectives

2. High efficiency n-type Si solar cells on Al2O3-passivated boron emitters

3. A Roadmap Toward 24% Efficient PERC Solar Cells in Industrial Mass Production