Photoconductivity transients and photosensitization phenomena in semi‐insulating GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353795
Reference32 articles.
1. Optical assessment of the main electron trap in bulk semi‐insulating GaAs
2. Isolated arsenic-antisite defect in GaAs and the properties ofEL2
3. Unification of the properties of theEL2 defect in GaAs
4. The spectroscopic evidence for the identity of EL2 and the AsGa antisite in As-grown GaAs
5. Persistent photoquenching and anion antisite defects in neutron‐irradiated GaAs
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