Optimization of LPCVD phosphorous-doped SiGe thin films for CMOS-compatible thermoelectric applications-Reference-Cited by-同舟云学术

Optimization of LPCVD phosphorous-doped SiGe thin films for CMOS-compatible thermoelectric applications

Published:2022-01-17 Issue:3 Volume:120 Page:031903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Schwinge Caroline¹^ORCID,Kühnel Kati¹,Emara Jennifer¹,Roy Lisa¹,Biedermann Kati¹,Weinreich Wenke¹^ORCID,Kolodinski Sabine²,Wiatr Maciej²,Gerlach Gerald³,Wagner-Reetz Maik¹^ORCID

Affiliation:

1. Fraunhofer Institute for Photonic Microsystems IPMS, An der Bartlake 5, 01109 Dresden, Germany

2. GlobalFoundries Management Services LLC & Co.KG, Wilschdorfer Landstraße 101, 01109 Dresden, Germany

3. Institute for Solid-State Electronics, Technische Universität Dresden, Helmholtzstr. 10, 01069 Dresden, Germany

Funder

Bundesministerium für Wirtschaft und Energie

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0076945

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2. Miniaturized thermoelectric generators based on poly-Si and poly-SiGe surface micromachining

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4. Thermoelectricity for IoT – A review

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