Evidence of minority‐carrier injection in (n‐n) SnO2‐Ge heterojunction diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.327529
Reference8 articles.
1. Physical Properties of SnO2 Materials: I . Preparation and Defect Structure
2. General properties of SnO2-GaAs and SnO2-Ge heterojunction photovoltaic cells
3. Analysis and characterization of P-N junction diode switching
4. Switching Time in Junction Diodes and Junction Transistors
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1. Anomalous diode behavior of Cu2S/SnO2 p–n junction;Journal of Materials Science: Materials in Electronics;2021-07-30
2. Some details of the electronic structure of tin oxide films;physica status solidi (b);2003-07
3. Photoemission yield study of the fermi level position on the clean SnO2(110) surface exposed to oxygen;Vacuum;1997-03
4. Electronic Properties and Origin of Gap States on the Clean SnO2(110) Surface Exposed to Oxygen;physica status solidi (b);1994-09-01
5. Electronic properties of the space charge layer of the clean SnO2(110) surface;Vacuum;1994-02
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